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Product Summary

MMBR911
NPN Bipolar Silicon RF Transistor in plastic package SOT23

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Attribute Value UOM
 Configuration   NPN    
 Function   RF    
 Package   SOT23    
 VCEO max   12   V
 VCBO max   20   V
 VEBO max   2.0   V
 IC max   50   mA
 Ptot max   300   mW
 DC current gain  hFE min   30   
 hFE max   200   
 @IE   30   mA
 @VCE   10   V
 Transition frequency  fT typ   6.0   GHz
 @IE   30   mA
 @VCE   10   V
 @f   300   MHz
 Power gain  GP typ   17   dB
 @IE   10   mA
 @VCE   10   V
 @f   500   MHz
 Noise figure  Ftyp   2.0   dB
 @IE   10   mA
 @VCE   10   V
 @f   500   MHz

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When using the information presented in Planeta Semiconductor's parametric search tool, we recommend that you completely review our datasheets to confirm the device functionality and performance for your application. Planeta Semiconductor is not responsible for any incorrect or incomplete information. No information provided herein shall be used in a manner which is adverse to Planeta.

     
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